منابع مشابه
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...
متن کاملSteep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
متن کاملSustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors.
It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operati...
متن کاملPiezoelectric Negative Capacitance
A thermodynamic model was constructed to analyze the negative capacitance effect in the presence of piezoelectricity. The model demonstrated that while piezoelectricity can lead to negative capacitance in principle, it is not strong enough in practice due to the unphysical amounts of charge and strain required. The inclusion of higher-order electromechanical coupling such as electrostriction ca...
متن کاملNegative capacitance effect in semiconductor devices
Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation of NC can be based on the analysis of the time-domain transient current in response to a small voltage step or impulse, involving a selfco...
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 2019
ISSN: 0018-9219,1558-2256
DOI: 10.1109/jproc.2018.2884518